utc s8050 npn epitaxial silicon transistor utc unisonic technologies co., ltd.1 qw-r201-013,a low voltage high current small signal npn transistor description the utc s8050 is a low voltage high current small 5409/DM7409 Quad 2-Input AND Gates with Open-Collector Outputs Physical Dimensions inches (millimeters) (Continued) 14-Lead Ceramic Flat Package (W) Order Number 5409FMQB NS Package Number W14B Kingtronics manufactures and markets General Purpose Rectifier 1N4001-1N4007. We supply high quality General Purpose Rectifier 1N4001-1N4007 to you. MMBT3904 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23. Features.  Epitaxial Planar Die Construction  Complementary PNP Type Available (MMBT3906)  Ideal for Medium Power Amplification and Switching  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. 1N4001 - 1N4007 1.0A RECTIFIER DO-41 High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak Low Reverse Leakage Current Created Date 2/2/2009 10:44:05 AM NXP Semiconductors Product data sheet High-speed diodes 1N4148; 1N4448 GRAPHICAL DATA 0 100 200 300 200 0 100 mbg451 Tamb (°C) IF (mA) Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. Device mounted on an FR4 printed-circuit board; lead length 10 mm. Fig.3 Forward current as a function of forward voltage.

1N4007 comparable with 1N4001 diode? Ask Question ... but if you look at some datasheets all specified parameters are the same except Vr and only two different ... 9013 Datasheet (PDF) 1.1. ktc9013sc.pdf Size:350K _update SEMICONDUCTOR KTC9013SC TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES ·Excellent hFE Linearity. ·Complementary to KTC9012SC.

Order today, ships today. 1N4001-T – Diode Standard 50V 1A Through Hole DO-41 from Diodes Incorporated. Pricing and Availability on millions of electronic components from Digi-Key Electronics. All the part names for which the file 09ddj7ucy7raey5779qx3p9aht3y.pdf is a datasheet si diode 1N4007 datasheet, cross reference, circuit and application notes in pdf format. si diode 1N4007 datasheet & applicatoin notes - Datasheet Archive The Datasheet Archive 1N4001 Datasheet, 1N4001 PDF, 1N4001 Data sheet, 1N4001 manual, 1N4001 pdf, 1N4001, datenblatt, Electronics 1N4001, alldatasheet, free, datasheet, Datasheets, data ... 1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007 General Purpose Plastic Rectifier, available from Vishay Intertechnology, a global manufacturer of electronic ...

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1N4001G Datasheet, 1N4001G PDF, 1N4001G Data sheet, 1N4001G manual, 1N4001G pdf, 1N4001G, datenblatt, Electronics 1N4001G, alldatasheet, free, datasheet, Datasheets ... This datasheet has been downloaded from: www.DatasheetCatalog.com Datasheets for electronic components. MARKING: J3 MAXIMUM RATINGS (TA-250C unless otherwise noted) Value 40 25 500 300 150 -55-150 Units mA mW Symbol V CBO CEO VEBO Parameter Collector-Base Voltage Order today, ships today. 1N4001-T – Diode Standard 50V 1A Through Hole DO-41 from Diodes Incorporated. Pricing and Availability on millions of electronic components from Digi-Key Electronics. 1N4007 comparable with 1N4001 diode? Ask Question ... but if you look at some datasheets all specified parameters are the same except Vr and only two different ... 1N4001-1N4007 2001 Fairchild Semiconductor Corporation 1N4001-1N4007, Rev. C 1N4001 - 1N4007 General Purpose Rectifiers (Glass Passivated) Absolute Maximum Ratings* T A = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics T A

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PARAMETER TEST CONDITIONS SYMBOL 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 UNIT Maximum instantaneous forward voltage 1.0 A VF 1.1 V Maximum DC reverse current at rated DC blocking voltage TA = 25 °C IR 5.0 μA TA = 125 °C 50 Typical junction capacitance 4.0 V, 1 MHz CJ 15 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

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1N4148 ON Semiconductor / Fairchild Diodes - General Purpose, Power, Switching 100V Io/200mA BULK datasheet, inventory, & pricing. 9015W(BR3CG9015W) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-323 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-323 Plastic Package. 特征 / Features P 大,h 高且特性好,与 9014W(BR3DG9014W)互补。 C FE Hig PC and IC, excellent hFE linearity, complementary pair with 9014W(BR3DG9014W). 1n4001-1n4007 do41 1a rating & characteristic curves of 1a general diodes do41 package fig. 4 - typical reverse characteristics average forward current,(a) fig. 1 - typical forward current derating curve ambient temperature, (ºc) 0 25 50 75 100 125 150 175 1.0 0.8 0.6 0.4 0.2 0 single phase half wave 60hz resistive or inductive load peak ... 1N4001-1N4007 2003 Fairchild Semiconductor Corporation 1N4001-1N4007, Rev. C1 1N4001 - 1N4007 General Purpose Rectifiers Absolute Maximum Ratings* T A = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics T A